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With the continuous transfer of the semiconductor industry to China, its upstream sealing and testing materials will gradually extend from upstream to downstream, and play a crucial role in this field. It is expected that by the end of this year, the application of sealing and testing materials in China will be very rich, including integrated circuits, CFMC, SIP, memory, sensors, etc. It is expected that their performance in the overall semiconductor application field will be very excellent. In addition, with the rapid development of small spacing products, the company will develop even faster.
The application of silicon carbide products cannot be separated from cutting-edge semiconductor materials in some fields, and higher requirements are also put forward for sustainable development of new materials, new processes, new packaging, and new application fields. Its core and overall technology have reached a very high level and are considered the direction of future high-performance development.
High performance silicon carbide materials have many advantages, including low noise, high temperature resistance, high pressure resistance, excellent high-temperature performance compared to Si, dielectric loss, lead-free SEI, high-frequency low density, low Q value, and low dielectric charge. These characteristics make the application of silicon carbide more widespread.
Silicon carbide materials can maintain good insulation performance at low heat, but when the temperature reaches 250 ° C, the insulation resistance of this material will sharply decrease.
The dielectric loss of silicon carbide depends on the accuracy of the heat source and the dielectric loss. When in contact with heat sources, their parasitic capacitance will exhibit polarized sound images, leading to energy loss (electromagnetic leakage). When this material is subjected to power interference, its insulation performance will greatly increase. This also affects the material and structure of silicon carbide.
The internal structure of silicon carbide devices can be regarded as conductors, which are actually semiconductor materials contained within the conductors. Due to the resistance, conductivity and positive charge of the conductor, it has several characteristics (energy density, thermal conductivity, chemical stability, resistivity). From the perspective of material structure, these characteristics are imperative.
The practical use of silicon carbide (SiC) and silicon carbide MOSFETs requires low on resistance, low saturation voltage drop, and smaller junction capacitance of silicon carbide tubes. For compounds such as aluminum (AlN), their conduction resistance is higher, followed by insulating gate G, and in addition, they are equivalent devices between SiCs. But what we are considering is that due to the high resistance of metal oxides (MOSFETs), this new compound will have a higher resistance and lead to an increase in power supply voltage.