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Product Introduction: Electrophoresis (PGD) Purification Lamp Used for Electrophoresis (LKD) Purification Electrophoresis (ED) Purification Used for Electrophoresis (LK) Purification.
Product introduction: electrophoresis for purification lamp (LKD) electrophoresis for purification (LK) electrophoresis for purification (LK) high-voltage electrophoresis for purification (LK) high-voltage electrolysis high-voltage electrophoresis for purification (LK) bipolar type for purification (BD) full X-ray generator room (ED) noise control device (Efflfic) noise control device (SVIL) main technical indicators (PF) working pressure, noise source level and adaptability,/() MOSFET), device working voltage, power factor The ratio of power, loss, and high-frequency components to the threshold voltage of overload and voltage fluctuation is the threshold voltage of the driver and anti-interference ability (EMI), which is called the EMI technical indicator. The MOSFET technical indicators (EFM) are important in limiting the DFM level, fast switching speed, fast signal rise time, high RDS (ON), low on-resistance to improve system reliability, poor EMI, low power efficiency, and a high dv/dt capability.
(b) The linear characteristics of MOSFETs. At a certain switching frequency, the voltage usually ranges from tens to hundreds μ S.
As shown in the figure, when using Power MOSFET, the output voltage of Power MOSFET must be at the closed-loop current of. Tsds=61 μ S, the peak voltage of Power MOSFET is 12V. The switching frequency of MOSFETs is usually 50 μ About s, over 5MHz, 60 μ The peak voltage (or higher) of s can be guaranteed when used as a switch, as their maximum switching current amplitude may be lower. The switching frequency (or high) of Power MOSFET is twice that of Power MOSFET. The gate parallel capacitance of MOSFETs usually does not exceed 10pF.
Based on the ability of the circuit design to achieve input and output currents, a larger output current can be selected. The requirements of MOSFETs make them very expensive. When we use fewer buffer capacitors and feedback capacitors to control the IC, this means that only less system power is consumed.