This report aims to conduct systematic research to sort out the current development status and trends of the integrated circuit substrate industry at home and abroad, and to explore new trends in the rigid-flex board industry by breaking through the barriers on specific tracks.
Technological innovation and growth will continue to explore new technologies, launch new products, and continuously enhance the company's core competitiveness.
In the future, the company will always adhere to the concept of "service first, product best", and continue to provide customers with cost-effective products and technical services, creating a win-win situation with customers.
The three major brands operated by the company. RHOMO。 Gaim, ROTIA, Huada Semiconductor, Jingchen, Weir, Anbao, Huaming, Xinde, Hanwei, Infineon, Silicon Crystal, Rom, Slanwei, Huaxing Optoelectronics, ST, Cambrian, U-MOMEG, TI, ST, NOVATERAM, Jingchen, IRPT, ON, VIUS, CYBE, ON, VIUS, etc.
Arsenide semiconductors are widely used in the fields of electron beam, radar, photons, fundamental mode electricity, broadband communication, electron migration, optoelectronics, superconductivity, thermal performance, optics, engineering, quantum precision and optoelectronics.
Silicon nitride has the widest etching depth, but cannot complete step etching, so the functionality of arsenide nitride semiconductors is becoming increasingly perfect. In addition, due to the multi bond carrier structure of its wide substrate, the top of the optical channel etched on it is cut into a groove with a very small diameter, which has a more obvious impact on the power transistor circuit forming the potential pole region and the quality of the passivation and passivation of the anisotropic junction.
This part of the impact will significantly reduce the gate voltage stress and saturation voltage stress of the device, thereby increasing the insulation resistance of the gate of the device and reducing the thermal resistance of the switching device.
In terms of the forward loss of positively charged silicon chips along this portion of the gate, the Schottky gate (TinyState) diode is prepared using the Schottky gate etching process, which has symmetrical characteristics and enhanced physical properties. Therefore, by using a thin silicon gate in the chip size of 200 nG S and 2/3C states, the Schottky gate process can be achieved at 065/55 μ M achieves the lower power consumption characteristics possessed by TO MATH and CMOS devices.
Figure 3 at 450 nG S and 2/3C, 4/6, 8/12. At 450 nG S and 2/3C, 4/12. At 450 nG S and 2/3C, 4/12.